Performance and reliability of strained-silicon nMOSFETs with SiN cap layer

IEEE Transactions on Electron Devices

Volumn 54, Issue 1, 2007, Pages 78-82

  Giusi, Gino ^a   Crupi, Felice ^b   Simoen, Eddy ^c   Eneman, Geert ^c,d,e   Jurczak, Malgorzata ^c  

^a CNR   (Italy)

^b UNIVERSITY OF CALABRIA   (Italy)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

^e FUND FOR SCIENTIFIC RESEARCH   (Belgium)

Author keywords

Low frequency noise; Reliability; Strained silicon

Indexed keywords

ELECTRIC DRIVES; PERFORMANCE; POLYSILICON; RELIABILITY; TENSILE STRESS; TRANSCONDUCTANCE;

BIAS-TEMPERATURE INSTABILITY; CHANNEL CURRENT DRIVE; HOT CARRIER STRESS; LOW-FREQUENCY NOISE; STRAINED-SILICON;

MOSFET DEVICES;

EID: 33846066221     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.887198     Document Type: Article

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