Stress technology impact on device performances and reliability for 〈100〉 sub-90 nm silicon-on-insulator complementary metal-oxide-semiconductor field-effect-transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3053-3057

  Lai, Chieh Ming ^a   Fang, Yean Kuen ^a   Yeh, Wen Kuan ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

Hot carrier induced degradation; Mobility enhancement; SOI CMOSFETs; Strain

Indexed keywords

CARRIER MOBILITY; CHARGE CARRIERS; RELIABILITY; SILICON ON INSULATOR TECHNOLOGY; STRAIN; TENSILE STRESS;

DEVICE PERFORMANCE; HOT-CARRIER-INDUCED DEGRADATION; MOBILITY ENHANCEMENT; SOI CMOSFETS;

MOSFET DEVICES;

EID: 33646928973     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3053     Document Type: Article

References (16)

1. T. Ghani, K. Mistry, P. Packan, S. Thompson, M. Stealer, S. Tyagi and M. Bohr: Proc. VLSI Technology Dig., 2000, p. 174.
2. W. Zhao, J. He, R. E. Beiford, L.-E. Wernersson and A. Seabaugh: IEEE Trans. Electron Devices 51 (2004) 317.
3. T. Ghani et al.: IEDM Tech. Dig., 2003, p. 978.
4. K. Mistry, M. Armstrong, C. Auth, S. Cea, T. Ghani, T. Hoffimann, A. Murthy, J. Sandford, R. Shaheed, K. Zawadzki, K. Zhang, S. Thompson and M. Bohr: Proc. VLSI Technology Dig., 2004, p. 50.
5. T. Komoda, A. Oishi, T. Sanuki, K. Kasai, H. Yoshimura, K. Ohno, M. Iwai, M. Saito, F. Matusuka, N. Nagashima and T. Noguchi: IEDM Tech. Dig., 2004, p. 217.
6. T. Matsumoto, S. Maeda, H. Dang, T. Uchida, K. Ota, T. Hirano, H. Sayama, T. Iwamatsu, T. Ipposhi, H. Oda, S. Maegawa, Y. Inoue and T. Nishimura: IEDM Tech. Dig., 2002, p. 663.
7. S. Pidin, T. Mori, K. Inoue, S. Fukuta, N. Itoh, E. Mutoh, K. Ohkoshi, R. Nakamura, K. Kobayashi, K. Kawamura, T. Saiki, S. Fukuyama, S. Satoh, M. Kase and K. Hashimoto: IEDM Tech. Dig., 2004, p. 216.
8. K. Goto, S. Satoh, H. Ohta, S. Fukuta, T. Yamamoto, T. Mori, Y. Tagawa, T. Sakuma, T. Saiki, Y. Kim, H. Kokura, N. Tamura, N. Horiguchi, M. Kojima, T. Sugii and K. Hashimoto: IEDM Tech. Dig., 2004, p. 209.
9. J. F. Zhang, C. Z. Zhao, A. H. Chen, G. Groeseneken and R. Degraeve: IEEE Trans. Electron Devices 51 (2004) 1267.
10. C. Z. Zhao, J. F. Zhang, G. Groeseneken and R. Degraeve: IEEE Trans. Electron Devices 51 (2004) 1274.
11. D. J. DiMaria: in The Physics of SiO and Its Interfaces, ed. S. T. Pantelides (Pergamon, New York, 1978) p. 160.
12. J. F. Zhang, H. K. Sii, G. Groeseneken and R. Degraeve: IEEE Trans. Electron Devices 48 (2001) 1127.
13. R. Bellens, E. de Schrijver, G. Van den Bosch, G. Groeseneken, P. Heremans and H. E. Maes: IEEE Trans. Electron Devices 41 (1994) 413.
14. V. H. Chan and J. E. Chung: IEEE J. Solid-State Circuits 30 (1995) 644.
15. T. Irisawa, T. Numata, N. Sugiyama and S. Takagi: IEEE Trans. Electron Devices 52 (2005) 993.
16. W. K. Yeh, W. H. Wang, Y. K. Fang and F. L Yang: Jpn. J. Appl. Phys. 42 (2003) 1993.