Impact of strain-engineering on the low-frequency noise performance of advanced MOSFETs

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2006, Pages 120-123

  Simoen, E ^a   Claeys, C ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; INTERFACES (MATERIALS); MOSFET DEVICES; SILICON; SPURIOUS SIGNAL NOISE;

EPITAXIAL DEPOSITION; LOW-FREQUENCY (LF) NOISE; NITRIDE STRESSORS;

STRAIN RELAXATION;

EID: 34547354934     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2006.306093     Document Type: Conference Paper

References (19)

1. D.J. Paul, Semicond. Sci.Technol., 19, p.R75 (2004).
2. M.L. Lee, E.A. Fitzgerald, M.T. Bulsara, M.T. Currie and A. Lochtefeld, J. Appl. Phys., 97, p.011101-1 (2005).
3. T. Oghuro, Y Okayama, K. Matsuzawa, N. Aoki, K. Kojima, H.S. Momose and K. Ishimura, In: 2003 Symp. on VLSI Techn. Dig., p.37 (2003).
4. S. Maeda, Y.-S. Jin, J.-A. Choi, S.-Y. Oh, H.-W. Lee, J.-Y. Yoo, M.-C. Sun, J.-K. Ku, K. Lee, S.-G. Bae, S.-G. Kang, J.-H. Yang, Y.-W. Kim and K.-P. Suh, In : 2004 Symp. on VLSI Techn. Dig., p. 102 (2004).
5. P. Fantini and G. Ferrari, In: Proc. of the 18th Int. Conf. on Noise and Fluctuations - ICNF 2005, p. 191 (2005).
6. G. Eneman, E. Simoen, R. Delhougne, E. Gaubas, V. Simons, P. Roussel, P. Verheyen, A. Lauwers, R. Loo, W. Vandervorst, K. De Meyer and C. Claeys, J. Phys.: Condens. Matter, 17, p.S2197 (2005).
7. R. Delhougne, G. Eneman, M. Caymax, R. Loo, P. Meunier-Beillard, P. Verheyen, W. Vandervorst and K. De Meyer, Solid-State Electron., 48, p.1307 (2004).
8. G. Eneman, P. Verheyen, R. Rooyackers, R. Delhougne, R. Loo, M. Caymax, P. Meunier-Beillard, K. De Meyer and W. Vandervorst, Mater. Sci. Semicond. Process., 8, p.337 (2005).
9. E. Simoen, G. Eneman, P. Verheyen, R. Delhougne, R. Loo, K. De Meyer and C. Claeys, Appl. Phys. Lett., 86, p.223509-1 (2005).
10. E. Simoen, G. Eneman, P. Verheyen, R. Loo, K. De Meyer and C. Claeys, IEEE Trans. Electron Devices, 53, p.1039 (2006).
11. M. Kondo, N. Sugii, M. Miyamoto, Y. Hoshino, M. Hatori, W. Hirasawa, Y. Rimura, S. Rimura, Y. Kondo and I. Yoshida, IEEE Trans. Electron Devices, 53, p.1226 (2006).
12. M.-P. Lu, W.-C. Lee and M.-J. Chen, Appl. Phys. Lett., 88, p.063511-1 (2006).
13. A. Stesmans, P. Somers, V.V. Afanas'ev, C. Claeys and E. Simoen, Paper submitted to Appl. Phys. Lett.
14. G. Eneman, P. Verheyen, R. Rooyackers, F. Nouri, L. Washington, R. Degraeve, B. Kaczer, V. Moroz, A. De Keersgieter, R. Schreutelkamp, M. Kawaguchi, Y. Kim, A. Samoilov, L. Smith, P.P. Absil, K. De Meyer, M. Jurczak and S. Biesemans, In: Proc. Symp. on VLSI Techn. Dig., p.22 (2005).
15. B. Duriez, B. Tavel, F. Boeuf, M.T. Basso, Y. Laplanche, C. Ortolland, D. Reber, F. Wacquant, P. Morin, D. Lenoble, R. Palla, M. Bidaud, D. Barge, C. Dachs, H. Brut, D. Roy, M. Marin, F. Payet, N. Cagnat, R. Difrenza, K. Rochereau, M. Denais, P. Stolk, M. Woo and F. Arnaud, In: IEDM Tech. Dig., p.847 (2004).
16. G. Giusi, E. Simoen, G. Eneman, P. Verheyen, F. Crupi, K. De Meyer, C. Claeys and C. Ciofi, IEEE Electron Device Lett., 27, p.508 (2006).
17. G. Eneman, M. Jurczak, P. Verheyen, T. Hoffmann, A. De Keersgieter and K. De Meyer, In: Proc. ESSDERC, Grenoble, France, p.449 (2005).
18. G. Giusi, F. Crupi, E. Simoen, G. Eneman and M. Jurczak, Paper submitted to IEEE Trans, on Device and Materials Reliability.
19. R. Agaiby et al., unpublished results.