Reliability of high-k dielectrics and its dependence on gate electrode and interfacial/high-k bi-layer structure

Microelectronics Reliability

Volumn 44, Issue 9-11 SPEC. ISS., 2004, Pages 1513-1518

  Kim, Y H ^c   Choi, R ^a   Jha, R ^b   Lee, J H ^b   Misra, V ^b   Lee, J C ^a  

^a The University of Texas at Austin   (United States)

^b North Carolina State University   (United States)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE ELECTRODES; LAYER STRUCTURES; METAL DIFFUSION; POST DEPOSITION ANNEALING (PDA);

ANNEALING; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC BREAKDOWN; ELECTRODES; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; MOSFET DEVICES; PROM; THRESHOLD VOLTAGE;

DIELECTRIC MATERIALS;

EID: 4544249842     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.07.049     Document Type: Conference Paper

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