Manufacturable embedded CMOS 6T-SRAM technology with high-k gate dielectric device for system-on-chip applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 423-426

  Oh, C B ^a   Kang, H S ^a   Ryu, H J ^a   Oh, M H ^a   Jung, H S ^a   Kim, Y S ^a   Lee, J H ^a   Lee, N I ^a   Cho, K H ^a   Lee, D H ^a   Yang, T H ^a   Cho, I S ^a   Kang, H K ^a   Kim, Y W ^a   Suh, K P ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DIELECTRIC MATERIALS; ELECTRON TRAPS; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTOR MATERIALS; STATIC RANDOM ACCESS STORAGE;

GATE DIELECTRICS;

CMOS INTEGRATED CIRCUITS;

EID: 0036932278     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. J. H. Lee et al., "Poly-Si Gate CMOSFETs with HfO2-Al2O3 Laminate Gate Dielectric for Low Power Applications," VLSI Tech. Digest, 84 (2002).
2. S. Pidin et al., "Low Standby Power CMOS with HfO2 Gate Oxide for 100-nm Generation," VLSI Tech. Digest, 28 (2002).
3. E. P. Gusev et al., "Ultra thin high-K gate stacks for advanced CMOS devices'" IEDM Tech. Digest, 451 (2001).
4. C. Hobbs et al., "80 nm Poly-Si Gate CMOS with HfO2 Gate Dielectric," IEDM Tech. Digest, 651 (2001).
5. H. J. Cho et al., "Novel Nitrogen Profile Engineering for Improved TaN/HfO2/Si MOSFET Performance," IEDM Tech. Digest, 655 (2001).
6. K. Onishi et al., "Reliability Characteristics, Including NBTI, of Polysilicon Gate HfO2 MOSFET's," IEDM Tech. Digest, 659 (2001).