SuB-30nm MOSFET fabrication technology incorporating precise dopant profile design using diffusion-less high-activation laser annealing

14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006

Volumn , Issue , 2006, Pages 147-151

  Narihiro, M ^a   Iwamoto, T ^a   Yamamoto, T ^a   Ikezawa, T ^a   Yako, K ^a   Tanaka, M ^a   Mineji, A ^b   Okuda, Y ^a   Uejima, K ^a   Shishiguchi, S ^b   Hane, M ^a  

^a NEC CORPORATION   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALS; ELECTRIC CONDUCTIVITY; INTERNET PROTOCOLS; LASERS; MOSFET DEVICES; RAPID THERMAL ANNEALING; SEMICONDUCTOR MATERIALS;

CHANNEL ENGINEERINGS; CURRENT DRIVABILITY; DOPANT ACTIVATIONS; DOPANT PROFILES; FABRICATION TECHNOLOGIES; FUNCTIONAL GATES; HALO IMPLANTATIONS; INSULATOR THICKNESSES; LASER ANNEALING; LOCAL STRESSES; MOS FETS; PROCESS REDESIGNS; SIDE-WALLS;

SEMICONDUCTOR LASERS;

EID: 47649095469     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2006.367995     Document Type: Conference Paper

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