Characterization of focused-ion-beam-induced damage in n -type silicon using Schottky contact

Applied Physics Letters

Volumn 88, Issue 15, 2006, Pages

  Xia, Ling ^a   Wu, Wengang ^a   Hao, Yilong ^a   Wang, Yangyuan ^a   Xu, Jun ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; MATHEMATICAL MODELS; SILICON;

CURRENT-VOLTAGE-TEMPERATURE MEASUREMENTS; FOCUSED-ION-BEAM-INDUCED DAMAGE; SCHOTTKY CONTACT;

ION BEAMS;

EID: 33646134596     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2195109     Document Type: Article

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