Simulation of high-temperature millisecond annealing based on atomistic modeling of boron diffusion/activation in silicon

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 975-978

  Hane, Masami ^a   Ikezawa, Takeo ^a   Matsuda, Tomoko ^b   Shishiguchi, Seiichi ^b  

^a NEC CORPORATION   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; DIFFUSION; HIGH TEMPERATURE EFFECTS; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; MONTE CARLO METHODS; POINT DEFECTS; BORON;

ATOMISTIC PROCESSES; HIGH-TEMPERATUE MILLISECOND ANNEALING; IMPLANTATION ENERGY; PRE-AMORPHIZATION IMPLANTATION (PAI); ADVANCED ANNEALING TECHNIQUE; ATOMISTIC MODELLING; ATOMISTIC PROCESS SIMULATION; BORON DIFFUSIONS; CONDITION; HIGHEST TEMPERATURE; MILLISECOND ANNEALING; PROCESS SIMULATION PROGRAM;

BORON; SILICON;

EID: 21644471710     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.2004.1419349     Document Type: Conference Paper

References (9)

1. H. Wakabayashi et al., IEDM Tech. Digs., p.441 (2000)
2. T. Ito et al., SSDM, p.182 (2001)
3. S. Talwar et al., Solid State Tech., p.83 (2003)
4. S. Felch et al., Proc. ECS Spring Meeting (2004)
5. M. Hane et al., IEDM, Tech. Digs., p.843 (2001)
6. M. Hane and T. Ikezawa, Proc. IWJT, p.75 (2002)
7. T. J. Lenonsky et al., Appl. Phys. Lett., 77, p.1834 (2000)
8. J. Tersoff, Phys. Rev. B39, p.5566 (1989)
9. A. M. C. Pérez-Martín, Nucl. Inst. Meth. B164-165, p.431 (2000)