Advantageous decaborane ion implantation for ultra-shallow junction of PMOSFETs compared with boron monomer implantation into Germanium preamorphized layer

Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

Volumn , Issue , 2006, Pages 88-91

  Aoyama, Takayuki ^a   Umisedo, Sei ^b   Hamamoto, Nariaki ^b   Nagayama, Tsutomu ^b   Tanjyo, Masayasu ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b NISSIN ION EQUIPMENT CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; AMORPHIZATION; BORON; GERMANIUM; ION IMPLANTATION; SEMICONDUCTOR JUNCTIONS;

BORON MONOMER; CARRIER ACTIVATION; GERMANIUM PREAMORPHIZED LAYER; ULTRA SHALLOW JUNCTION;

MOSFET DEVICES;

EID: 34250179473     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iwjt.2006.220867     Document Type: Conference Paper

References (8)

1. K. Goto et al., Extended Abstract of IEDM 1996, pp.435-438.
2. K. Goto et al, Extended Abstract of IEDM 1997, pp.471-474.
3. S. Umisedo et al, Extended Abstracts of IWJT 2004, pp.27-30.
4. N. Hamamoto et al, Final Program and Abstract Book of 15th International Conference on Ion ImplantationTechnology (IIT) 2004, p.95.
5. T. Aoyama et al, Extended Abstracts of IWJT 2005, pp.27-30.
6. K. Adachi et al, Extended Abstracts of IWJT 2001, pp.35-38.
7. K. Goto et al, Extended Abstract of IEDM 2003, pp.623-626.
8. K. Yoneda et al, Extended Abstracts of IWJT 2002, pp.19-22.