Improving junction uniformity and quality with optimized diffusion-less annealing

Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007

Volumn , Issue , 2007, Pages 69-72

  Borland, John ^a   Ootsuka, Fumio ^b   Aoyama, Takayuki ^b   Onizawa, Takashi ^b   Buczkowski, Andrzej ^c  

^a JOB Technologies   (United States)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^c NANOMETRICS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; LIGHTING; XENON;

ANNEALING CONDITIONS; JUNCTION LEAKAGE CURRENTS;

TECHNICAL PRESENTATIONS;

EID: 41949104988     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2007.4279951     Document Type: Conference Paper

References (3)

1. J. Borland, S. Shishiguchi, A. Mineji, W. Krull, D. Jacobson, M. Tanjo, W. Lerch, S. Paul, J. Gelpey, S. McCoy, J. Venturini, M. Current, V. Faifer, R. Hillard, M. Benjamin, T. Walker, A. Buczkowski, Z. Li and J. Chen, "45nm Node p+ USJ Formation with High Dopant Activation and Low Damage", IWJT 2006, p. 4.
2. A. Mineji, J, Borland, S. Shishiguchi, M. Hane, M. Tanjo and T. Nagayama, "Molecular Dopants and High Mass Dopants for HALO and Extension Implantation", to be publish IWJT 2007.
3. th International Conference on Advanced Thermal Processing, IEEE/RTP 2006, p. 85.