Molecular dopants and high mass dopants for HALO and extension implantation

Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007

Volumn , Issue , 2007, Pages 73-76

  Mineji, Akira ^a   Borland, John ^b   Shishiguchi, Seiichi ^a   Hane, Masami ^a   Tanjyo, Masayasu ^c   Nagayama, Tsutomu ^c  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b JOB Technologies   (United States)

^c NISSIN ION EQUIPMENT CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BORON; BORON COMPOUNDS; DOPING (ADDITIVES); SOLAR RADIATION; TECHNICAL PRESENTATIONS; THEOREM PROVING;

ACTIVATION LEVELS; ANNEALING CONDITIONS; DOPANT SPECIES; FLASH ANNEALING; HIGH QUALITIES; JUNCTION LEAKAGES; MOLECULAR DOPANTS; SPIKE ANNEALS;

ANNEALING;

EID: 47649109729     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2007.4279952     Document Type: Conference Paper

References (2)

1. J. Borland, S. Shishiguchi, A. Mineji, W. Krull, D. Jacobson, M. Tanjo, W. Lerch, S. Paul, J. Gelpey, S. McCoy, J. Venturini, M. Current, V. Faifer, R. Hillard, M. Benjamin, T. Walker, A. Buczkowski, Z. Li and J. Chen, "45nm Node p+ USJ Formation with High Dopant Activation and Low Damage", IWJT 2006, p. 4.
2. T. Ito, K. Suguro, M. Tomura, T. Taniguchi, Y. Ushiku, T. Iinuma, T. Itani, M. Yoshioka, T. Owada, Y. Imaoka, H. Murayama and T. Kusuda, "Flash Lamp Annealing Technology for Ultra-shallow Junction Formation", IWJT 2002, p. 23.