CFD optimisation of up-flow vertical HVPE reactor for GaN growth

Journal of Crystal Growth

Volumn 310, Issue 14, 2008, Pages 3358-3365

  Sytniewski, Łukasz J ^a   Lapkin, Alexei A ^a   Stepanov, Sergey ^b   Wang, Wang N ^b  

^a University of Bath   (United Kingdom)

^b University of Bath   (United Kingdom)

Author keywords

A1. Fluid flows; A3. Hydride vapour phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

EPITAXIAL GROWTH; FLOW OF FLUIDS; GALLIUM NITRIDE; GROWTH RATE; SUBSTRATES;

GALLIUM CHLORIDE; GRAVITY FIELD; HYDRIDE VAPOUR PHASE EPITAXY; SEMICONDUCTING III-V MATERIALS;

COMPUTATIONAL FLUID DYNAMICS;

EID: 45049088355     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.04.017     Document Type: Article

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