Potential applications of III-V nitride semiconductors

Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 137-146

  Morkoç, Hadis ^a,b  

^a University of Illinois at Urbana Champaign   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Gallium nitride; Semiconductors; Temperature electronics

Indexed keywords

ENERGY GAP; LIGHT EMITTING DIODES; NITRIDES; PHOTODETECTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS;

TEMPERATURE ELECTRONICS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030672397     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01849-1     Document Type: Article

References (39)

1. H. Morkoç, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov and M. Burns, J. Appl. Phys. Rev., 76 (1994) 1363.
2. S.N. Mohammad, A. Salvador and H. Morkoç, Proc. IEEE, 83 (1995) 1306.
3. S.N. Mohammad and H. Morkoç, Prog. Quantum Electron., in press.
4. S. Nakamura, M. Senoh, N. Isawa, and S. Nagahama, Jpn. J. Appl. Phys. 34, Part 2, No. 10B, Oct 15 (1995) issue (in press); S. Nakamura, M. Senoh, N. Isawa, and S. Nagahama, Jpn. J. Appl. Phys. 34, Part 2, No. 7A, (1995) L795; S. Nakamura, M. Senoh, N. Isawa and S. Nagahama, Jpn. J. Appl. Phys. 34, Part 2, No. 7A, (1995) L797.
5. S. Nakamura, M. Senoh, N. Isawa, and S. Nagahama, Jpn. J. Appl. Phys. 34, Part 2, No. 10B, Oct 15 (1995) issue (in press); S. Nakamura, M. Senoh, N. Isawa, and S. Nagahama, Jpn. J. Appl. Phys. 34, Part 2, No. 7A, (1995) L795; S. Nakamura, M. Senoh, N. Isawa and S. Nagahama, Jpn. J. Appl. Phys. 34, Part 2, No. 7A, (1995) L797.
6. S. Nakamura, M. Senoh, N. Isawa, and S. Nagahama, Jpn. J. Appl. Phys. 34, Part 2, No. 10B, Oct 15 (1995) issue (in press); S. Nakamura, M. Senoh, N. Isawa, and S. Nagahama, Jpn. J. Appl. Phys. 34, Part 2, No. 7A, (1995) L795; S. Nakamura, M. Senoh, N. Isawa and S. Nagahama, Jpn. J. Appl. Phys. 34, Part 2, No. 7A, (1995) L797.
7. Leszczynski et al., J. Cryst. Growth, 126 (1993) 601.
8. T.J. Drummond, W.T. Masselink and H. Morkoç, Proc. IEEE, 74 (1986) 773.
9. H. Morkoç, B. Sverdlov and G.B. Gao, Proc. IEEE, 81 (1993) 492.
10. M.A. Khan, M.S. Shur, Q.C. Chen and J.N. Kuznia, Electron. Lett., 30 (1994) 2175.
11. R. Fischer, T.J. Drummond, J. Klem, W. Kopp, T. Henderson, D. Perrachione and H. Morkoç, IEEE Trans. Electron. Dev., ED-31 (1984) 1028.
12. Ö. Aktas, W. Kim, Z. Fan, A.E. Botchkarev, A. Salvador, S.N. Mohammad, B. Sverdlov and H. Morkoç, Electron. Lett., 31 (1995) 1389.
13. S.C. Binari, L.B. Rowland, G. Kelner, W. Kruppa, H.B. Dietrich, K. Doverspike and D.K. Gaskill, 21st Int. Symp. Compound Semicond. Proc., 1994.
14. M.A. Khan, M.S. Shur, J.N. Kuznia, Q.C. Cheng, J. Burm and W. Schaff, Appl. Phys. Lett., 66 (1995) 1083.
15. Z. Fan, S.N. Mohammad, Ö. Aktas, A. Botchkarev, A. Salvador and H. Morkoç, Appl. Phys. Lett., in press.
16. Y.-F. Wu, B.P. Keller, S. Keller, D. Kapolnek, S.P. Denbaars, and U.K. Mishra, Device Research Conference, Santa Barbara, CA. June 24-26, 1996.
17. M.C. Benjamin, C. Wang, R.F. Davis and R.J. Nemanich, Appl. Phys. Lett., 64 (1994) 3288-3290.
18. G. Martin, A. Botchkarev, W. Kim, Ö. Aktas, A. Rockett, H. Morkoç, W.L.R. Lambrecht and B. Segall, (unpublished).
19. F. Stengel, S.N. Mohammad and H. Morkoç, J. Appl. Phys., in press.
20. M.G. Crawford, IEEE Circuits and Devices Mag. 8 (1992) 24.
21. R.M. Bhargava, Optoelectron. Devices Technol., 7 (1992) 19-47.
22. . J.I. Pankove, E.I. Miller and J.E. Berkeyheiser, RCA Rev., 32 (1971) 383.
23. H. Amano, M. Kito, K. Hiramatsu and I. Akasaki, Jpn. J. Appl. Phys., 28 (1989) L2112.
24. S. Nakamura, T. Mukai and M. Senoh, Jpn. J. Appl. Phys., 30 (1991) L1998.
25. H. Amano, M. Kito, K. Hiramatsu and I. Akasaki, Jpn. J. Appl. Phys., 28 (1989) L2112; I. Akasaki and H. Amano, J. Electrochem. Soc., 141 (1994) 2266.
26. H. Amano, M. Kito, K. Hiramatsu and I. Akasaki, Jpn. J. Appl. Phys., 28 (1989) L2112; I. Akasaki and H. Amano, J. Electrochem. Soc., 141 (1994) 2266.
27. H. Amano, K. Hiramatsu and I. Akasaki, Jpn. J. Appl. Phys., 27 (1988) L1384.
28. S. Nakamura, M. Senoh, N. Isawa and S. Nagahama, Jpn. J. Appl. Phys., 34, Part 2, No. 7A (1995) L797.
29. P. Asthana, IEEE Spectrum, 31 (1994) 60.
30. M.A. Haase, J. Qui, J.M. Depuydt and H. Cheng, Appl. Phys. Lett., 59 (1991) 1272.
31. A. Salovatke, H. Jeon, M. Hoviven, P. Kelkar, A.V. Nurmikko, D.C. Grillo, L. He, J. Han, Y. Fan, M. Ringle and R.L. Gunshor, Electron. Lett., 29 (1993) 2041.
32. H. Morkoç, B. Sverdlov and G, Gao, Proc. IEEE, 81 (1993) 493.
33. Uenoyama and Suzuki, Proc. Int. Symp. Blue Light Emitting Diodes and Lasers, Chiba, Japan, March 4-7, 1996.
34. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasawa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, Jpn. J. Appl. Phys., 35 (1996) 174; S. Nakamura, Proc. Int. Symp. Blue Light Emitting Diodes and Lasers, Chiba, Japan, March 4-7, 1996.
35. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasawa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, Jpn. J. Appl. Phys., 35 (1996) 174; S. Nakamura, Proc. Int. Symp. Blue Light Emitting Diodes and Lasers, Chiba, Japan, March 4-7, 1996.
36. M.A. Khan, J.N. Kuznia, D.T. Olson, J.M. Van Hove, M. Blasingame and L.F. Reitz, Appl. Phys. Lett., 60 (1992) 2917.
37. B. Goldenberg, J.D. Zook and R.J. Ulmer, Fabrication and performance of GaN detectors, Topical Workshop on III-V Nitrides Proc., Nagoya, Japan, 1995.
38. Z.C. Chang, D.B. Mott and P.K. Shu, Device Res. Conf., Santa Barbara, CA June 24-26, 1996.
39. B. Chen, Z. Zhang and J. Bernholc, Bull. March APS Meeting, 40 (1995) 127-128.