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Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

Highly homogeneous bulk-like 2′′ GaN grown by HVPE on MOCVD-GaN template

(8) Kasic, A a Gogova, D a,b Larsson, H a Ivanov, I a Birch, J a Monemar, B a Fehrer, M c Harle V c

a LINKÖPING UNIVERSITY (Sweden)

b CTRL LAB SOLAR ENER NEW ENER S (Bulgaria)

c OSRAM OPTO SEMICONDUCTORS GMBH (Germany)

Author keywords

A1. Stresses; A3. Hydride vapor phase epitaxy; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

FREE ELECTRON LASERS; GALLIUM COMPOUNDS; INFRARED SPECTROSCOPY; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SILICON CARBIDE; STRESS ANALYSIS; VAPOR PHASE EPITAXY;

BAND GAPS; DONOR-BOUND EXCITON PROPERTIES; HYDRIDE VAPOR-PHASE EPITAXY; SEMICONDUCTING III-V MATERIALS;

GALLIUM NITRIDE;

EID: 15944387898 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.11.008 Document Type: Conference Paper

Times cited : (9)

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