On the chloride vapor-phase epitaxy growth of GaN and its characterization

Journal of Crystal Growth

Volumn 260, Issue 1-2, 2004, Pages 43-49

  Varadarajan, E ^a   Puviarasu, P ^a   Kumar, J ^a   Dhanasekaran, R ^a  

^a ANNA UNIVERSITY   (India)

Author keywords

A1. Photoluminescence; A1. Raman scattering; A1. X ray diffraction; A3. Vapor phase epitaxy; B1. Gallium nitride

Indexed keywords

ABSORPTION SPECTROSCOPY; CRYSTAL STRUCTURE; GALLIUM NITRIDE; PHOTOLUMINESCENCE; RAMAN SCATTERING; SAPPHIRE; SPECTROMETERS; ULTRAVIOLET RADIATION; X RAY DIFFRACTION;

GROWTH TEMPERATURE;

VAPOR PHASE EPITAXY;

EID: 0242523148     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.08.021     Document Type: Article

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