Modeling study of hydride vapor phase epitaxy of GaN

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 439-442

  Karpov, S Yu ^a   Zimina, D V ^a   Makarov, Yu N ^b   Beaumont, B ^c   Nataf, G ^c   Gibart, P ^c   Heuken, M ^d   Jurgensen H ^d   Krishnan, A ^e  

^a SOFT IMPACT LTD   (Russian Federation)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c CNRS   (France)

^d AIXTRON AG   (Germany)

^e CFD RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CHLORINE; HYDRIDES; MATHEMATICAL MODELS; NITRIDES; REACTION KINETICS; SUBSTRATES; SURFACE PHENOMENA; VAPOR PHASE EPITAXY;

GALLIUM CHLORIDES; GALLIUM NITRIDES; HYDRIDE VAPOR PHASE EPITAXY; SURFACE KINETIC MODEL;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033221348     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<439::AID-PSSA439>3.0.CO;2-6     Document Type: Article

References (6)

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5. A. A. CHERNOV and M. P. RUZAIKIN, in: Crystal Growth, Vol. 13, Ed. E. I. GIVARGIZOV, Izd. Nauka, Moscow 1980 (p. 20) (in Russian).
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