Effects of oxynitride buffer layer on the electrical characteristics of poly-silicon TFTs using P2O3 gate dielectric

IEEE Transactions on Electron Devices

Volumn 55, Issue 6, 2008, Pages 1379-1385

  Pan, Tung Ming ^a   Wu, Tin Wei ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

High k; Interface trap density; N2O plasma power; Pr2O3; SiOxNy buffer layer; Smooth interface

Indexed keywords

CARRIER MOBILITY; ELECTRIC CURRENTS; GATE DIELECTRICS; HOT CARRIERS; INTERFACES (MATERIALS); POLYSILICON;

INTERFACE TRAP DENSITY; SMOOTH INTERFACE; SUBTHRESHOLD SLOPE;

THIN FILM TRANSISTORS;

EID: 44949249070     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.920030     Document Type: Article

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