Comparison of electrical and reliability characteristics of different 14 Å oxynitride gate dielectrics

IEEE Electron Device Letters

Volumn 23, Issue 7, 2002, Pages 416-418

  Pan, Tung Ming ^a   Lin, Hsiu Shan ^a   Chen, Main Gwo ^a   Liu, Chuan Hsi ^a   Chang, Yih Jau ^a  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

N2O; N2O ISSG; Oxynitride; RPN; RTNO; Ultrathin

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; ELECTRON MOBILITY; GATES (TRANSISTOR); HOLE MOBILITY; INTERFACES (MATERIALS); NITRIDES; NITRIDING; PLASMA APPLICATIONS; RELIABILITY; ULSI CIRCUITS; VOLTAGE MEASUREMENT;

GATE DIELECTRICS; OXYNITRIDE; REMOTE PLASMA NITRIDATTION;

DIELECTRIC FILMS;

EID: 0036646346     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.1015223     Document Type: Article

References (9)

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6. 2
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9. Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides