Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization

Semiconductor Science and Technology

Volumn 16, Issue 11, 2001, Pages 918-924

  Pichon, L ^a,b   Mourgues, K ^a   Raoult, F ^a   Mohammed Brahim, T ^a   Kis Sion, K ^a   Briand, D ^a   Bonnaud, O ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

^b UNIVERSITÉ DE CAEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; GATES (TRANSISTOR); POLYSILICON; PRESSURE EFFECTS; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

THIN FILM TRANSISTORS;

EID: 0035505097     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/11/306     Document Type: Article

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