Extraction of trap states in laser-crystallized polycrystalline-silicon thin-film transistors and analysis of degradation by self-heating

Journal of Applied Physics

Volumn 91, Issue 6, 2002, Pages 3855-3858

  Kimura, Mutsumi ^a   Inoue, Satoshi ^a   Shimoda, Tatsuya ^a   Tam, Simon W B ^b   Lui, O K Basil ^b   Migliorato, Piero ^c   Nozawa, Ryoichi ^a  

^a SEIKO EPSON CORPORATION   (Japan)

^b Epson Cambridge Laboratory   (United Kingdom)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTIC; INTERFACE TRAPS; LOW FREQUENCY; P-TYPE; SELF-HEATING; SILICON-SILICON BOND; TRAP STATE;

DANGLING BONDS; DEGRADATION; GRAIN BOUNDARIES; HYDROGEN BONDS; THIN FILM TRANSISTORS;

INTERFACE STATES;

EID: 0037087397     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1446238     Document Type: Article

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