Chlorine plasma and polysilicon etch characterization in an inductively coupled plasma etch reactor

Plasma Sources Science and Technology

Volumn 13, Issue 3, 2004, Pages 466-483

  Khater, Marwan H ^a,b   Overzet, Lawrence J ^a  

^a The University of Texas at Dallas   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCH REACTORS; ION DENSITIES; ION FLUX; PLASMA CONDITION;

CHLORINE; CONCENTRATION (PROCESS); ELECTRIC FIELDS; OPTIMIZATION; PLASMA ETCHING; PLASMA SOURCES; POLYSILICON;

INDUCTIVELY COUPLED PLASMA;

EID: 4444380584     PISSN: 09630252     EISSN: None     Source Type: Journal    
DOI: 10.1088/0963-0252/13/3/014     Document Type: Article

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