Direct simulation monte carlo (DSMC) of rarefied gas flow during etching of large diameter (300-mm) wafers

IEEE Transactions on Plasma Science

Volumn 24, Issue 1, 1996, Pages 131-132

  Economou, Demetre J ^a   Bartel, Timothy J ^b  

^a University of Houston   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHLORINE; COMPUTER SIMULATION; GAS DYNAMICS; MONTE CARLO METHODS; PLASMA DEVICES; PLASMA ETCHING; PLASMA JETS; PROBABILITY; SURFACES;

INLET GAS ARRANGEMENTS; LARGE DIAMETER WAFER; RAREFIED GAS FLOW; REACTION UNIFORMITY; REACTOR GEOMETRY;

PLASMA FLOW;

EID: 0030086571     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/27.491747     Document Type: Article

References (3)

1. P. Singer, "1995: Looking down the road to quarter-micron production," Semiconduct. Int., vol. 18, pp. 46-52, 1995.
2. G. A. Bird, Molecular Gas Dynamics and the Direct Simulation of Gas Flows. Oxford: Oxford, 1994.
3. D. J. Economou, T. J. Band, R. S. Wise, and D. P. Lymberopoulos, "Two-dimensional Direct Simulation Monte Carlo (DSMC) of reactive neutral and ion flow in a high density plasma reactor," IEEE Trans. Plasma Sci., vol. 23, pp. 581-590, 1995.