Room temperature nanoimprint technology using hydrogen silsequioxane (HSQ)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 6 B, 2002, Pages 4198-4202

  Igaku, Yutaka ^a   Matsui, Shinji ^a   Ishigaki, Hiroyuki ^a   Fujita, Jun Ichi ^b   Ishida, Masahiko ^c   Ochiai, Yukinori ^a   Namatsu, Hideo ^c   Komuro, Masanori ^d   Hiroshima, Hiroshi ^c  

^a UNIVERSITY OF HYOGO   (Japan)

^b NEC CORPORATION   (Japan)

^c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Hydrogen silsequioxane (HSQ); Microfabrication; Nanofabrication; Nanoimprint lithography (NIL); Room temperature nanoimprint lithography (RT NIL); Spin on glass (SOG)

Indexed keywords

HYDROGEN INORGANIC COMPOUNDS; NANOTECHNOLOGY; PRESSURE EFFECTS; THERMAL EFFECTS; THERMAL EXPANSION;

ROOM-TEMPERATURE NANOIMPRINT LITHOGRAPHY (RT-NIL);

LITHOGRAPHY;

EID: 0036613997     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.4198     Document Type: Article

References (14)