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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 3561-3563

Fabrication of quantum point contacts by imprint lithography and transport studies

(8) Martini, Ingo a Kuhn, Silke a Kamp, Martin a Worschech, Lukas a Forchel, Alfred a Eisert, Dominik b Koeth, Johannes b Sijbesma, Rint c

a UNIVERSITY OF WÜRZBURG (Germany)

b NANOPLUS NANOSYSTEMS AND TECHNOLOGIES GMBH (Germany)

c EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON GAS; EVAPORATION; GATES (TRANSISTOR); HETEROJUNCTIONS; PHOTOLITHOGRAPHY; POLYMETHYL METHACRYLATES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

QUANTUM POINT CONTACTS (QPC); SCHOTTKY GATES; SPLIT GATES;

ELECTRON BEAM LITHOGRAPHY;

EID: 0034314809 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1319705 Document Type: Article

Times cited : (31)

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