Deep UV light emitting diodes grown by gas source molecular beam epitaxy

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue 8-9, 2008, Pages 764-769

  Nikishin, Sergey ^a   Borisov, Boris ^a   Kuryatkov, Vladimir ^a   Holtz, Mark ^a   Garrett, Gregory A ^b   Sarney, Wendy L ^b   Sampath, Anand V ^b   Shen, Hongen ^b   Wraback, Michael ^b   Usikov, Alexander ^c   Dmitriev, Vladimir ^c  

^a TEXAS TECH UNIVERSITY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c TDI Inc ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ELECTRIC PROPERTIES; GAS SOURCE MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; STRUCTURAL PROPERTIES; SUPERLATTICES;

CATHODOLUMINESCENCE INTENSITIES; HYDRIDE VAPOR PHASE EPITAXY (HVPE); ULTRAVIOLET LIGHT EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 44149127235     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9405-3     Document Type: Conference Paper

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