Enhanced radiative recombination in AlGaN quantum wells grown by molecular-beam epitaxy

Semiconductors

Volumn 40, Issue 4, 2006, Pages 454-458

  Borisov, B A ^a   Nikishin, S N ^a   Kuryatkov, V V ^a   Kuchinskii V I ^b   Holtz, M ^a   Temkin, H ^a  

^a Department of Electrical and Computer Engineering   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33645751710     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782606040154     Document Type: Article

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