Enhanced deep ultraviolet luminescence from AlGaN quantum wells grown in the three-dimensional mode

Applied Physics Letters

Volumn 87, Issue 19, 2005, Pages 1-3

  Borisov, B ^a   Nikishin, S ^a   Kuryatkov, V ^a   Temkin, H ^a  

^a Department of Electrical and Computer Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE INTENSITY; ULTRAVIOLET LUMINESCENCE; WAVELENGTHS;

ALUMINUM COMPOUNDS; CATHODOLUMINESCENCE; HIGH ENERGY ELECTRON DIFFRACTION; REFLECTION; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET RADIATION;

LUMINESCENCE OF SOLIDS;

EID: 27644530092     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2128485     Document Type: Article

References (21)

1. G. Kipshidze, V. Kuryatkov, B. Borisov, S. Nikishin, M. Holtz, S. N. G. Chu, and H. Temkin, Phys. Status Solidi A 192, 286 (2002).
2. G. Kipshidze, V. Kuryatkov, K. Zhu, B. Borisov, M. Holtz, S. Nikishin, and H. Temkin, J. Appl. Phys. 93, 1363 (2003).
3. V. Adivarahan, S. Wu, A. Chitnis, R. Pachipulusu, V. Mandavilli, M. Shatalov, J. P. Zhang, M. A. Khan, G. Tamulaitis, A. Sereika, I. Yilmaz, M. S. Shur, and R. Gaska, Appl. Phys. Lett. 81, 3666 (2002).
4. J. P. Zhang, S. Wu, A. Rai, V. Mandavilli, V. Adivarahan, A. Chitnis, M. Shatalov, and M. A. Khan, Appl. Phys. Lett. 83, 3456 (2003), and references therein.
5. A. Yasan, R. McClintock, K. Mayes, D. Shiell, L. Gautero, S. R. Darvish, P. Kung, and M. Razeghi, Appl. Phys. Lett. 83, 4701 (2003).
6. S. A. Nikishin, V. V. Kuryatkov, A. Chandolu, B. A. Borisov, G. D. Kipshidze, I. Ahmad, M. Holtz, and H. Temkin, Jpn. J. Appl. Phys., Part 2 42, L1362 (2003).
7. A. Hanlon, P. M. Pattison, J. F. Kaeding, R. Sharma, P. Fini, and S. Nakamura, Jpn. J. Appl. Phys., Part 2 42, L628 (2003).
8. K. Mayes, A. Yasan, R. McClintock, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, Appl. Phys. Lett. 84, 1046 (2004).
9. A. J. Fischer, A. A. Allerman, M. H. Crawford, K. H. A. Bogart, S. R. Lee, R. J. Kaplar, W. W. Chow, S. R. Kurtz, K. W. Fullmer, and J. J. Figiel, Appl. Phys. Lett. 84, 3394 (2004).
10. V. Adivarahan, S. Wu, J. P. Zhang, A. Chitnis, M. Shatalov, V. Mandavilli, R. Gaska, and M. A. Khan, Appl. Phys. Lett. 84, 4762 (2004).
11. S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997).
12. S. Tanaka, S. Iwai, and Y. Aoyagi, Appl. Phys. Lett. 69, 4096 (1996).
13. H. Hirayama, Y. Aoyagi, and S. Tanaka, MRS Internet J. Nitride Semicond. Res. 4S1, G9.4 (1999).
14. B. Daudin, F. Widmann, G. Feuillet, Y. Samson, M. Arlery, and J. L. Rouviere, Phys. Rev. B 56, R7069 (1997).
15. F. Widmann, B. Daudin, G. Feuillet, Y. Samson, J. L. Rouvie're, and N. Pelekanos, J. Appl. Phys. 83, 7618 (1998).
16. S. Nikishin, M. Holtz, and H. Temkin, Jpn. J. Appl. Phys., Part 1 44, 7221 (2005).
17. See, for example, M. B. Panish and H. Temkin, Gas Source Molecular Beam Epitaxy (Springer, Berlin, 1993).
18. B. Borisov, V. Kuryatkov, S. Nikishin, H. Temkin, K. A. Bulashevich, I. A. Zhmakin, V. F. Mymrin, and S. Yu. Karpov (unpublished).
19. D. Huang, Y. Fu, and H. Morko̧, in Optoelectronic Properties of Semiconductor Nanostructures, edited by, T. Steiner, (Artech House, Boston, 2004).
20. P. J. Schuck, M. D. Mason, R. D. Grober, O. Ambacher, A. P. Lima, C. Miskys, R. Dimitrov, and M. Stutzmann, Appl. Phys. Lett. 79, 952 (2001).
21. T. V. Shubina, V. N. Jmerik, M. G. Tkachman, V. A. Vekshin, V. V. Ratnikov, A. A. Toropov, A. A. Sitnikova, S. V. Ivanov, J. P. Bergman, F. Karlsson, P. Holtz, and B. Monemar, Phys. Status Solidi B 234, 919 (2002).