|
Volumn 80, Issue 12, 2002, Pages 2108-2110
|
Characteristics of high-quality p-type AlxGa1-xN/GaN superlattices
a a a a a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
ADMITTANCE SPECTROSCOPIES;
AL COMPOSITION;
HALL MEASUREMENTS;
HIGH QUALITY;
METAL-ORGANIC VAPOR PHASE EPITAXY;
P-TYPE;
ALUMINUM;
ELECTRIC PROPERTIES;
GALLIUM;
HOLE CONCENTRATION;
SUPERLATTICES;
|
EID: 79955992474
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1463708 Document Type: Article |
Times cited : (23)
|
References (11)
|