Implantation effects of low energy H and D ions in germanium at -120 °C and room temperature

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 9, 2008, Pages 1971-1978

  Desrosiers, Nicholas ^a   Giguère, Alexandre ^a   Terreault, Bernard ^a   Chicoine, Martin ^b   Schiettekatte, François ^b  

^a INRS EMT   (Canada)

^b UNIVERSITÉ DE MONTRÉAL   (Canada)

Author keywords

Blistering; Germanium; Hydrogen isotopes; Ion implantation; Radiation defects

Indexed keywords

ION IMPLANTATION; ISOTOPES; MOLECULAR VIBRATIONS; RAMAN SCATTERING; RAPID THERMAL ANNEALING;

BLISTERING; HYDROGEN ISOTOPES; RADIATION DEFECTS; ROOM TEMPERATURE;

GERMANIUM COMPOUNDS;

EID: 43649100155     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.03.081     Document Type: Article

References (25)

1. Bruel M. Electron. Lett. 31 (1995) 1201
2. Bruel M. Nucl. Instr. and Meth. B 108 (1996) 313
3. For a review, see. Terreault B. Phys. Stat. Solidi (a) 204 (2007) 2129
4. Tong Q.-Y., Gutjahr K., Hopfe S., Gösele U., and Lee T.-H. Appl. Phys. Lett. 70 (1997) 1390
5. Bedell S.W., and Lanford W.A. J. Appl. Phys. 90 (2001) 1138
6. Akatsu T., Bourdelle K.K., Richtarch C., Faure B., and Letertre F. Appl. Phys. Lett. 86 (2005) 182910
7. Zahler J.M., Fontcuberta I Morral A., Griggs M.J., Atwater H.A., and Chabal Y.J. Phys. Rev. B 75 (2007) 035309
8. David M.L., Pailloux F., Babonneau D., Drouet M., Barbot J.F., Simoen E., and Claeys C. J. Appl. Phys. 102 (2007) 096101
9. Moutanabbir O., Giguère A., and Terreault B. Appl. Phys. Lett. 84 (2004) 3286
10. J.F. Ziegler, J.P. Biersack, SRIM-2003, .
11. Horcas I., Fernandez R., Gomez-Rodriguez J.M., Colchero J., Gomez-Herrero J., and Baro A.M. Rev. Sci. Instr. 78 (2007) 013705
12. Nanotec Electronica .
13. Giguère A., and Terreault B. Surf. Coat. Technol. 201 (2007) 8205
14. Giguère A., and Terreault B. J. Appl. Phys. 102 (2007) 106106
15. Thompson M.W. Defects and Radiation Damage in Metals (1969), Cambridge at the University Press (Chapter 4)
16. Moutanabbir O., Terreault B., Chicoine M., Schiettekatte F., and Simpson P.J. Phys. Rev. B 75 (2007) 075201
17. Posselt M., Bischoff L., Grambole D., and Herrmann F. Appl. Phys. Lett. 89 (2006) 151918
18. Cerofolini G.F., Balboni R., Bisero D., Corni F., Frabboni S., Ottaviani G., Tonini R., Bruza R.S., Zecca A., Ceschini M., Giebel G., and Pavesi L. Phys. Status Solidi (a) 150 (1995) 539
19. Tonini R., Corni F., Nobili C., Ottaviani G., Cazzaniga F., and Queirolo G. Solid State Phenom. 82-84 (2002) 291
20. Weldon M.K., Marsico V.E., Chabal Y.J., Agarwal A., Eaglesham D.J., Sapjeta J., Brown W.L., Jacobson D.C., Caudano Y., Christman S.B., and Chaban E.E. J. Vac. Sci. Technol. B 15 (1997) 1065
21. Moutanabbir O., and Terreault B. J. Chem. Phys. 121 (2004) 7973
22. T. Zahel, G. Otto, G. Hobler, in: G.K. Celler (Ed.), Electrochem. Soc. Proc. Vol. 2005-03, 2005, p. 79.
23. Nastasi M., Höchbauer T., Lee J.-K., Hirth J.P., Ridgway M., and Lafford T. Appl. Phys. Lett. 86 (2005) 154102
24. Frabboni S. Phys. Rev. B 65 (2002) 165436
25. Lee J.-K., Lin Y., Jia Q.X., Höchbauer T., Jung H.S., Shao L., Misra A., and Nastasi M. Appl. Phys. Lett. 89 (2006) 101901