Hydrogen blistering of silicon: Effect of implantation temperature, isotope dependence, and key role of dynamic annealing

Journal of Applied Physics

Volumn 102, Issue 10, 2007, Pages

  Gigùre, Alexandre ^a   Terreault, Bernard ^a  

^a INRS EMT   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; ION IMPLANTATION; ISOTOPES; MATHEMATICAL MODELS;

DYNAMIC ANNEALING; HYDROGEN BLISTERING; IMPLANTATION TEMPERATURE; ISOTOPE DEPENDENCE;

SILICON COMPOUNDS;

EID: 36649036163     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2818105     Document Type: Article

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