Competition between damage buildup and dynamic annealing in ion implantation into Ge

Applied Physics Letters

Volumn 89, Issue 15, 2006, Pages

  Posselt, M ^a   Bischoff, L ^a   Grambole, D ^a   Herrmann, F ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNELING IMPLANTATION; DEFECT ACCUMULATION; DYNAMIC ANNEALING;

ANNEALING; COMPUTER SIMULATION; DEFECTS; SEMICONDUCTING GERMANIUM; THERMAL EFFECTS;

ION IMPLANTATION;

EID: 33750005664     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2360238     Document Type: Article

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