Particle modeling of inductively coupled plasma and radicals flow to predict etch rate of silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4, 2002, Pages 2213-2219

  Shiozawa, Masakazu ^a   Nanbu, Kenichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Chlorine plasma; Direct simulation Monte Carlo method; Etch rate; Inductively coupled plasma; Particle modeling

Indexed keywords

CALCULATIONS; CHLORINE; COMPUTER SIMULATION; ELECTROMAGNETIC FIELDS; ETCHING; MATHEMATICAL MODELS; MONTE CARLO METHODS; PARTICLES (PARTICULATE MATTER); SILICON;

CHLORINE PLASMA; ETCH RATE; RADICAL FLOW;

INDUCTIVELY COUPLED PLASMA;

EID: 0036529234     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.2213     Document Type: Article

References (21)