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Volumn 112, Issue 2-3 SPEC. ISS., 2004, Pages 134-138

Thermal stability of Hf-based high-k dielectric films on silicon for advanced CMOS devices

Author keywords

High k; Oxygen diffusion; Thermal stability; XPS

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIFFUSION; OXIDATION; OZONE; RAPID THERMAL ANNEALING; RESONANCE; SILICON; SPUTTERING; SUBSTRATES; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 4344648486     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.05.020     Document Type: Article
Times cited : (14)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.