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Volumn 112, Issue 2-3 SPEC. ISS., 2004, Pages 134-138
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Thermal stability of Hf-based high-k dielectric films on silicon for advanced CMOS devices
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Author keywords
High k; Oxygen diffusion; Thermal stability; XPS
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Indexed keywords
CMOS INTEGRATED CIRCUITS;
DIFFUSION;
OXIDATION;
OZONE;
RAPID THERMAL ANNEALING;
RESONANCE;
SILICON;
SPUTTERING;
SUBSTRATES;
THERMODYNAMIC STABILITY;
X RAY PHOTOELECTRON SPECTROSCOPY;
ATOMIC TRANSPORT;
NUCLEAR RESONANCE PROFILING (NRP);
OXYGEN DIFFUSION;
PRE-ANNEALING;
DIELECTRIC FILMS;
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EID: 4344648486
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mseb.2004.05.020 Document Type: Article |
Times cited : (14)
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References (16)
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