Surface stress relaxation in SiO 2 films by plasma nitridation and nitrogen distribution in the film

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 41-45

  Itakura, A N ^a   Shimoda, M ^a   Kitajima, M ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Oxynitride; Plasma nitridation; Silicon oxide; Stress relaxation; Surface stress

Indexed keywords

CHEMICAL BONDS; COMPRESSIVE STRESS; FORMING; INTERFACES (MATERIALS); NITROGEN; SEMICONDUCTING SILICON; SILICA; STRESS RELAXATION;

INTRINSIC STRESS;

SEMICONDUCTING FILMS;

EID: 0038071434     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00494-X     Document Type: Conference Paper

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