Effect of the metal electrode on the characteristics of Ta2 O5 capacitors for DRAM applications

2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings

Volumn , Issue , 2006, Pages 543-546

  Atanassova, E ^a   Spassov, D ^a   Paskaleva, A ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DEPOSITION; DETERIORATION; DYNAMIC RANDOM ACCESS STORAGE; HIGH-K DIELECTRIC; LEAKAGE CURRENTS; MICROELECTRONICS; TANTALUM OXIDES; TITANIUM NITRIDE;

DEPOSITION PROCESS; ELECTRICAL CHARACTERISTIC; ELECTRICALLY ACTIVE CENTERS; ELECTRODE MATERIAL; METAL ELECTRODES; RADIATION DEFECTS; SPUTTERING TECHNIQUES; STORAGE CAPACITOR;

ELECTRODES;

EID: 77956513472     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICMEL.2006.1651023     Document Type: Conference Paper

References (6)

1. Intern. Techn. Roadmap for Semicond., http://public.itrs.net/files/ 2003ITRS
2. G. D. Wilk, R. M. Wallance, J. M. Anthony, " High-k Gate Dielectrics: Current Status and Materials Properties Considerations" , Journal of Applied Physics, 2001, vol.89, pp. 5242-5275.
3. 2 for high density DRAM applications" , in Handbook of Surfaces and Interfaces of Materials, H. S. Nalva, Ed., vol.4, pp. 439-479, San Diego, USA: Acad. Press: 2001.
4. 5 on Si " , Microelectronics Journal, 1999, vol.30, pp. 265-274.
5. 5 on Si" , Microelectronics Journal, 2002, vol.33, pp. 907-920.
6. 5 and its influence on the electrical properties" , Thin Solid Films, 2003, vol.426 pp. 191-199.