Investigations on highly stable thermal characteristics of a dilute In 0.2Ga0.8AsSb/GaAs doped-channel field-effect transistor

Semiconductor Science and Technology

Volumn 23, Issue 4, 2008, Pages

  Su, Ke Hua ^a   Hsu, Wei Chou ^a   Lee, Ching Sung ^b   Hu, Po Jung ^a   Wu, Yue Han ^c   Chang, Li ^c   Hsiao, Ru Shang ^c   Chen, Jenn Fang ^c   Chi, Tung Wei ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DOPING (ADDITIVES); HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SURFACE CHEMISTRY; THERMODYNAMIC STABILITY; TRANSCONDUCTANCE;

CHANNEL LAYERS; GATE VOLTAGE SWINGS; MAXIMUM OSCILLATION FREQUENCY; THERMAL THRESHOLD COEFFICIENT;

FIELD EFFECT TRANSISTORS;

EID: 42449140157     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/4/045012     Document Type: Article

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