Device linearity improvement and current enhancement utilizing high-to-low doping-channel FETs

Superlattices and Microstructures

Volumn 20, Issue 1, 1996, Pages 15-23

  Lour, Wen Shiung ^a   Liu, Wen Chau ^b   Tasi, Jung Hui ^b   Laih, Lih Wen ^b   Chen, H R ^c  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c KUNG SHAN INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC CONTACTS; ELECTRIC CURRENTS; GATES (TRANSISTOR); HETEROJUNCTIONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

CAMEL GATE FIELD EFFECT TRANSISTORS; CURRENT ENHANCEMENT; DRAIN CURRENT; GATE TO DRAIN BREAKDOWN; SCHOTTKY CONTACT;

FIELD EFFECT TRANSISTORS;

EID: 0029696109     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0045     Document Type: Article

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