An improved symmetrically-graded doped-channel heterostructure field-effect transistor

Journal of the Korean Physical Society

Volumn 50, Issue 6, 2007, Pages 1878-1882

  Su, Ke Hua ^a   Hsu, Wei Chou ^a   Hu, Po Jung ^a   Chen, Yeong Jia ^a   Lee, Ching Sung ^b   Lin, Yu Shyan ^c   Wu, Chang Luen ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

^c NATIONAL DONG HWA UNIVERSITY   (Taiwan)

^d Transcom Inc   (Taiwan)

Author keywords

Coulomb scattering; DCFET; Gate voltage swing; Graded doped channel

Indexed keywords

EID: 34547352808     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.50.1878     Document Type: Article

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