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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3372-3375

Improvement in linearity of novel InGaAsN-based high electron mobility transistors

(7) Su, Y K a Chen, W C a Hsu, S H a Wu, J D a Chang, S J a Chuang, R W a Chen, W R b

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b DA YEH UNIVERSITY (Taiwan)

Author keywords

Annealing; HEMTs; InGaAsN; MOCVD

Indexed keywords

ANNEALING; CURRENT DENSITY; ELECTRIC POTENTIAL; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSCONDUCTANCE;

ELECTRICALLY ACTIVE DEFECTS; INGAASN; OPTOELECTRONICS INTEGRAL CIRCUITS (OEICS); THERMAL ANNEALING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33646897327 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.3372 Document Type: Article

Times cited : (4)

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