Reducing source and drain resistances in InGaP/InGaAs doped-channel HFETs using δ-doping Schottky layer

Electronics Letters

Volumn 36, Issue 15, 2000, Pages 1320-1322

  Chiu, H C ^a   Chien, F T ^a   Yang, S C ^a   Kuo, C W ^a   Chan, Y J ^b  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; HALL EFFECT; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

DOPED-CHANNEL FIELD EFFECT TRANSISTORS (DCFET); HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFET);

FIELD EFFECT TRANSISTORS;

EID: 0034227104     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000905     Document Type: Article

References (7)

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3. KRAUS, S., HEI, H., XU, D., SEXL, M., BOHM, G., TRANKLE, G., and WEIMANN, G.: 'InGaAS/InAlAs HEMTs with extremely low source and drain resistances', Electron. Lett., 1996, 32, (17), pp. 1619-1620
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