Influence of device geometry on SOI single-hole transistor characteristics

Microelectronics Reliability

Volumn 41, Issue 11, 2001, Pages 1841-1846

  Tang, X ^a   Baie, X ^b   Colinge, J P ^c   Loumaye, P ^a   Renaux, C ^a   Bayot, V ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b IBM   (United States)

^c University of California Davis   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; GROUND STATE; HOLE MOBILITY; OSCILLATIONS; POISSON EQUATION; SEMICONDUCTOR QUANTUM WIRES; SILICON ON INSULATOR TECHNOLOGY;

SINGLE-HOLE TRANSISTORS;

MOSFET DEVICES;

EID: 0035501395     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00044-0     Document Type: Conference Paper

References (17)

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