Atomic-layer cleaving with SixGey strain layers for fabrication of Si and Ge-rich SOI device layers

IEEE International SOI Conference

Volumn , Issue , 2001, Pages 11-12

  Current, M I ^a   Farrens, S N ^a   Fuerfanger, M ^a   Kang, S ^a   Kirk, H R ^a   Malik, I J ^a   Feng, L ^a   Henley, F J ^a  

^a Silicon Genesis   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; MULTILAYERS; POROUS SILICON; SEMICONDUCTING SILICON COMPOUNDS; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC-LAYER CLEAVING; LAYER TRANSFER PROCESSES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0035164008     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. Silicon-on-insulator technology and devices X