Back gate effects on threshold voltage sensitivity to SOI thickness in fully-depleted SOI MOSFETs

IEEE Electron Device Letters

Volumn 22, Issue 1, 2001, Pages 32-34

  Noguchi, Mitsuhiro ^a   Numata, Toshinori ^a   Mitani, Yuuichiro ^a   Shino, Tomoaki ^a   Kawanaka, Shigeru ^a   Oowaki, Yukihito ^a   Toriumi, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; GATES (TRANSISTOR); SENSITIVITY ANALYSIS; SILICON ON INSULATOR TECHNOLOGY; THICK FILM DEVICES; THICKNESS MEASUREMENT; THRESHOLD VOLTAGE;

BACK GATE EFFECTS; BACK GATE OXIDE THICKNESS; BACK GATE VOLTAGE; CAPACITIVE COUPLING; THRESHOLD VOLTAGE SENSITIVITY;

MOSFET DEVICES;

EID: 0035120828     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.892435     Document Type: Article

References (11)

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