Effects of buried oxide stress on thin-film silicon-on-insulator metal-oxide-semiconductor field-effect transistor

Applied Physics Letters

Volumn 72, Issue 6, 1998, Pages 677-679

  Lee, Jong Wook ^a   Nam, Myung Hee ^a   Oh, Jeong Hee ^a   Yang, Ji Woon ^a   Lee, Won Chang ^a   Kim, Hyung Ki ^a   Oh, Min Rok ^a   Koh, Yo Hwan ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); ION IMPLANTATION; LEAKAGE CURRENTS; OXIDATION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON ON INSULATOR TECHNOLOGY; TENSILE PROPERTIES; THIN FILM DEVICES; TRANSMISSION ELECTRON MICROSCOPY;

BURIED OXIDE STRESS; DRAIN CURRENT; SIDE CONDUCTION LEAKAGE; TENSILE STRESS;

MOSFET DEVICES;

EID: 0032498480     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120842     Document Type: Article

References (4)

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2. H. M. Park, K. S. Jones, J. A. Slinkman, and M. E. Law, J. Appl. Phys. 78, 3664 (1995).
3. T. Elewa, B. Kleveland, S. Cristoloveanu, B. Boukriss, and A. Chovet, IEEE Trans. Electron Devices 39, 874 (1992).
4. H. M. Park, M. Racanelli, G. Harris, and W. L. M. Huang, Proceedings of the 8th International Symposium on Silicon-On-Insulator Technology and Devices, PV 97-23 (1997), p. 63.