Fabrication of SOI substrates with ultra-thin Si layers

Electronics Letters

Volumn 34, Issue 12, 1998, Pages 1265-1267

  Hobart, K D ^a   Kub, F J ^a   Jernigan, G G ^a   Twigg, M E ^a   Thompson, P E ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; ION IMPLANTATION; SEMICONDUCTING SILICON COMPOUNDS;

BOND AND ETCH BACK TECHNIQUE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0032096756     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980829     Document Type: Article

References (13)

1. YOSHIMI, Y., WADA, T., KATO, K., and TANGO, H.: 'High-performance SOI MOSFET using thin SOI film'. IEDM Tech. Dig., Washington, DC, 1987, pp. 640-643
2. OMURA, Y., KURIHARA, K., TAKAHASHI, Y., ISHIYAMA, T., NAKAJIMA, Y., and IZUMI, K.: '50-nm channel NMOSFET/SIMOX with an ultrathin 2- or 6-nm thick silicon layer and their significant features of operations', IEEE Electron. Device Lett., 1997, 18, pp. 190-193
3. BALESTRA, F., CRISTOVEANU, S., BENACHIR, M., BRINI, J., and ELEWA, T.: 'Double-gate silicon-on-insulator with volume inversion: a new device with greatly enhanced performance', IEEE Electron. Device Lett., 1987, 8, pp. 410-412
4. TAKAHASHI, Y., NAMATSU, H., KURIHARA, K., IWADATE, K., NAGASE, M., and MURASE, K.: 'Size dependence of the characterisitics of Si single-electron transistors on SIMOX substrates', IEEE Trans. Electron. Device, 1996, 43, pp. 1213-1217
5. POWELL, A.R., IYER, S.S., and LEGOUES, F.K.: 'New approach to the growth of low dislocation relaxed SiGe material', Appl. Phys. Lett., 1994, 64, pp. 1856-1858
6. EJECKAM, F.E., SEAFORD, M.L., LO, Y.-H., HOU, H.Q., and HAMMONS, B.E.: 'Dislocation-free InSb grown on GaAs compliant universal substrates', Appl. Phys. Lett., 1997, 71, pp. 776-778
7. FREUND, L. B., and NIX, W.D.: 'A critical thickness condition for a strained compliant substrate/epitaxial film system', Appl. Phys. Lett., 1996, 69, pp. 173-175
8. YABLONOVITCH, E., GMIITTER, T., HARBISON, J., and BHAT, R.: 'Extreme selectivity in the lift-off of epitaxial GaAs films', Appl. Phys. Lett., 1987, 51, pp. 2222-2224
9. BRUEL, M.: 'Silicon-on-insulator material technology', Electron. Lett., 1995, 37, pp. 1201-1202
10. 0.3 layer as an etch stop', J. Electrochem. Soc., 1990, 137, pp. 3219-3223
11. GODBEY, D.J., PALKUTI, L.J., LEONOV, P., KRIST, A., WANG, J., TWIGG, M.E., HUGHES, H.L., and HOBART, K.: 'Fabrication of bond and etch back silicon on insulator using SiGe-MBE and selective etching techniques'. Mat. Res. Soc. Symp. Proc., 1991, Vol. 220, pp. 291-295
12. 3COOH', J. Electrochem. Soc., 1995, 142, pp. 1260-1266
13. SEAH, M.P., and DENCH, W.A.: 'Analytic expression for the electron inelastic mean free path as a function of the electron kinetic energy', Surf. Interface Anal., 1979, 1, pp. 2-11