Modification of silicon-on-insulator structures under nano-scale device fabrication

Microelectronic Engineering

Volumn 69, Issue 2-4, 2003, Pages 168-172

  Naumova, O V ^a   Antonova, I V ^a   Popov, V P ^a   Nastaushev, Yu V ^a   Gavrilova, T A ^a   Litvin, L V ^a   Aseev, A L ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Charge fluctuation; Conductance oscillation; Ultrathin silicon layer

Indexed keywords

BONDING; FABRICATION; HYDROGEN; OSCILLATIONS; PLASMA ETCHING; SILICON ON INSULATOR TECHNOLOGY;

DEVICE FABRICATION;

MICROELECTRONICS;

EID: 0141569556     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00293-4     Document Type: Conference Paper

References (6)

1. Colinge J.P. 2nd Edition Silicon-on-Insulator Technology to VLSI. 1997;Kluwer, Boston.
2. Zhuang L., Guo L., Chou S.Y. Silicon single-electron quantum-dot transistor switch operating at room temperature. Appl. Phys. Lett. 72:1998;1205-1207.
3. Tilke A., Blick R.H., Lorenz H., Kotthaus J.P. Single-electron tunneling in highly doped silicon nanowires in a dual-gate configuration. J. Appl. Phys. 89:2001;8159-8162.
4. Bruel M. Application of hydrogen ion beams to silicon on insulator material technology. Nucl. Instrum. Methods Phys. Res. B. 108:1996;313-319.
5. Popov V.P., Antonova I.V., Stas V.F., Mironova L.V., Gutakovskii A.K., Spesistsev E.V., Mardezhov A.S., Franzusov A.A., Feofanov G.N. Properties of extremely thin silicon layer in silicon-on-insulator structure formed by smart-cut technology. Mater. Sci. Eng. B73:2000;82-86.
6. Ishikuro H., Hiramoto T. On the origin of tunneling barriers in silicon single electron and single hole transistors. Appl. Phys. Lett. 74:1999;8-10.