Evaluation of surface defects on SIMOX and their influences on device characteristics

Journal of Crystal Growth

Volumn 210, Issue 1, 2000, Pages 40-44

  Naruoka, H ^a   Iwamatsu, T ^a   Tanaka, T ^a   Hattori, N ^a   Ipposhi, T ^a   Yamamoto, H ^a   Mashiko, Y ^a   Sudo, M ^b   Nakai, T ^b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b MITSUBISHI MATERIALS CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; ION IMPLANTATION; OXIDATION; RADIATION DAMAGE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SILICON ON INSULATOR TECHNOLOGY; SURFACE STRUCTURE;

GATE OXIDE INTEGRITY (GOI); SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

SILICON WAFERS;

EID: 0033873512     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00643-0     Document Type: Article

References (2)

1. Iwamatsu T.et al. Jpn. J. Appl. Phys. 36:1997;7104.
2. H. Naruoka et al., IEEE International SOI Conference Proceedings, 1997, p. 182.