Low thermal budget surface preparation of Si and SiGe

Applied Surface Science

Volumn 225, Issue 1-4, 2004, Pages 256-266

  Abbadie, A ^a   Hartmann, J M ^a   Holliger, P ^a   Semeria M N ^a   Besson, P ^b   Gentile, P ^a  

^a CEA GRENOBLE   (France)

^b STMICROELECTRONICS   (France)

Author keywords

H 2 bake; HF last wet cleaning; Reduced pressure chemical vapor deposition; Si epitaxy; Surface preparation

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; HYDROGEN; INTERFEROMETRY; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES; SURFACE ROUGHNESS;

H2 BAKES; HF-LAST WET CLEANING; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION; SI EPITAXY; SURFACE PREPARATION;

SILICON COMPOUNDS;

EID: 1342308337     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.10.018     Document Type: Article

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