Direct regrowth of thin strained silicon films on planarized relaxed silicon-germanium virtual substrates

Thin Solid Films

Volumn 513, Issue 1-2, 2006, Pages 300-306

  Leitz, C W ^a   Vineis, C J ^a   Carlin, J ^a   Fiorenza, J ^a   Braithwaite, G ^a   Westhoff, R ^a   Yang, V ^a   Carroll, M ^a   Langdo, T A ^a   Matthews, K ^b   Kohli, P ^c   Rodder, M ^c   Wise, R ^c   Lochtefeld, A ^a  

^a AmberWave Systems Corporation   (United States)

^b Advanced Technology Development Facility   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

Chemical vapor deposition; Germanium; Semiconductors; Silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; FIELD EFFECT TRANSISTORS; GERMANIUM; SEMICONDUCTOR MATERIALS; SILICON;

DIRECT REGROWTH; INTERFACIAL TRANSITIONS; THIN STRAINED SILICON; VIRTUAL SUBSTRATES;

THIN FILMS;

EID: 33745470219     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.01.063     Document Type: Article

References (28)

1. Rim K., Chu J., Chen H., Jenkins K.A., Kanarsky T., Lee K., Mocuta A., Zhu H., Roy R., Newbury J., Ott J., Petrarca K., Mooney P., Lacey D., Koester S., Chan K., Boyd D., Ieong M., and Wong H.S. Symp. on VLSI Tech. (2002) 98
2. Wang H.C.-H., Wang Y.-P., Chen S.-J., Ge C.-H., Ting S.M., Kung J.-Y., Hwang R.-L., Chiu H.-K., Sheu L.C., Tsai P.-Y., Yao L.-G., Chen S.-C., Tao H.-J., Yeo Y.-C., Lee W.-C., and Hu C. IEDM Tech. Digest (2003) 3.4.1
3. Sanuki T., Oishi A., Morimasa Y., Aota S., Kinoshita T., Hasumi R., Takegawa Y., Isobe K., Yoshimura H., Iwai M., Sunouchi K., and Noguchi T. IEDM Tech. Digest (2003) 3.5.1
4. Bulsara M. Compd. Semicond. 8 (2002) 39
5. Fitzgerald E.A., Xie Y.-H., Green M.L., Brasen D., Kortan A.R., Michel J., Mii Y.-J., and Weir B.E. Appl. Phys. Lett. 59 (1991) 811
6. Westhoff R., Carlin J., Erdtmann M., Langdo T., Leitz C., Yang V., Petrocelli K., Bulsara M., Fitzgerald E., and Vineis C. Electrochem. Soc. Proc. 2004-7 (2004) 589
7. Currie M.T., Leitz C.W., Langdo T.A., Taraschi G., Fitzgerald E.A., and Antoniadis D.A. J. Vac. Sci. Technol., B 19 (2001) 2268
8. Leitz C., Yang V., Carroll M., Langdo T., Westhoff R., Vineis C., and Bulsara M. Mater. Sci. Semicond. Process. 8 (2004) 187
9. Sugii N., Hisamoto D., Washio K., Yokoyama N., and Kimura S. IEEE Trans. Electron Devices 49 (2002) 2237
10. Meyerson B.S., Himpsel F.J., and Uram K.J. Appl. Phys. Lett. 57 (1990) 1034
11. Silvestri V.J., Nummy K., Ronsheim P., Bendernagel R., Kerr D., Phan V.T., Borland J.O., and Hann J. Electrochem. Soc. 137 (1990) 2323
12. Celik S.M., and Öztürk M.C. J. Electrochem. Soc. 146 (1999) 1557
13. Carroll M.S., Sturm J.C., and Yang M. J. Electrochem. Soc. 147 (2000) 4652
14. Gräf D., Grundner M., and Schulz R. J. Vac. Sci. Technol., A 7 (1989) 808
15. Niwano M., Miura T., Kimura Y., Tajima R., and Miyamoto N. J. Appl. Phys. 79 (1996) 3708
16. Abbadie A., Hartmann J.M., Holliger P., Séméria M.N., Besson P., and Gentile P. Appl. Surf. Sci. 225 (2004) 256
17. Sakuraba M., Matsuura T., and Murota J. Mater. Res. Soc. Symp. Proc. 535 (1999) 281
18. Bennett J.M., and Mattsson L. Introduction to Surface Roughness and Scattering (1999), Optical Society of America, Washington, D.C.
19. Fitzgerald E.A., Xie Y.-H., Monroe D., Silverman P.J., Kuo J.M., Kortan A.R., Thiel F.A., and Weir B.E. J. Vac. Sci. Technol., B 10 (1992) 1807
20. Lichtenberger H., Mühlberger M., and Schäffler F. Appl. Phys. Lett. 82 (2003) 3650
21. Lichtenberger H., Mühlberger M., Schelling C., Schwinger W., Senz S., and Schäffler F. Physica, E, Low-Dimens. Syst. Nanostruct. 23 (2004) 442
22. Chen H., Bedell S.W., Murphy R.J., Mocuta D.M., Turansky A.R., Domenicucci A.G., and Sadana D.K. Electrochem. Soc. Proc. 2004-7 (2004) 569
23. Sun Y.-K., Bonser D.J., and Engel T. J. Vac. Sci. Technol., A 10 (1992) 2314
24. Sun Y.-K., Bonser D.J., and Engel T. Phys. Rev., B 43 (1991) 14309
25. Ghidini G., and Smith F.W. J. Electrochem. Soc. 131 (1984) 2924
26. Smith F.W., and Ghidini G. J. Electrochem. Soc. 129 (1982) 1300
27. Fiorenza J.G., Braithwaite G., Leitz C.W., Currie M.T., Yap J., Singaporewala F., Yang V.K., Langdo T.A., Carlin J., Somerville M., Lochtefeld A., Badawi H., and Bulsara M.T. Semicond. Sci. Technol. 19 (2004) L4
28. Gates S.M., Koleske D.D., Heath J.R., and Copel M. Appl. Phys. Lett. 62 (1993) 510