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Applied Physics Letters

Volumn 85, Issue 13, 2004, Pages 2493-2495

Observation of stacking faults in strained Si layers

(5) Bedell, S W a Fogel, K a Sadana, D K a Chen, H b Domenicucci, A b

a IBM T J WATSON RESEARCH CENTER (United States)

b IBM MICROELECTRONICS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ETCHING; STRAIN RELAXATIONS; TENSILE STRAIN; THREADING DISLOCATIONS (TD);

CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; OPTICAL MICROSCOPY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SILICON; STRAIN RATE; TENSILE STRESS; TRANSMISSION ELECTRON MICROSCOPY;

STACKING FAULTS;

EID: 7544246636 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1795354 Document Type: Article

Times cited : (33)

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